Two-Dimensional Transition Metal Dichalcogenides and Their Advanced Transistors
DOI:
https://doi.org/10.54097/nerjgf69Keywords:
Transition metal dichalcogenides; semiconductors; transistor; integrated circuit.Abstract
With the found of graphene, people got great interest in its properties. But as no band gap exists in graphene, it’s not easy to be used in semiconductor production. Inspired by its disjuncture, transition metal dichalcogenides (TMDs) are developed which have many fascinating properties. Meanwhile, silicon gradually reaches its physical limits. As the feature size of silicon transistors gets smaller, silicon devices are becoming more complicated and their cost and energy consumption keeps rising. Finding a new material to take silicon’s place puts on the agenda TMDs show potential in producing high-frequency devices and have lower energy consumption. Using TMDs in high-speed devices makes great hope to keep Moore’s law. It also can be used in other areas like photodetection. This article gives a full and concise review of TMDs from what TMD is, its mechanism and properties, how to produce it, devices made by TMDs to problems they face.
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References
Manzeli Sajedeh, Ovchinnikov Dmitry, Pasquier Diego, et al. 2D transition metal dichalcogenides. Nature Reviews Materials, 2017, 2: 17033.
Huang H., Fan Xiaofeng, Singh David J., et al. Recent progress of TMD nanomaterials: phase transitions and applications. Nanoscale, 2020,12: 1247-1268.
Chhowalla Manish, Shin Hyeon Suk, Eda Goki, et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nature Chemistry, 2013, 5: 263-275.
Chen Ye, Lai Zhuangchai, Zhang Xiao, et al. Phase engineering of nanomaterials. Nature Reviews Chemistry, 2020, 4: 243-256.
Wang Qing Hua, Kalantar-Zadeh Kourosh, Kis Andras, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotechnology, 2012, 7: 699-712.
Kuc Agnieszka, Heine Thomas, and Kis Andras. Electronic properties of transition-metal dichalcogenides. MRS Bulletin, 2015, 40(7): 577-584.
Xu Xiaodong, Yao Wang, Xiao Di, et al. Spin and pseudospins in layered transition metal dichalcogenides. Nature Physics, 2014, 10: 343-350.
Yang Xiangdong. The research on scalability of van der Waals integrated two-dimensional semiconductor devices and its application. Hunan University, 2024.
Lembke Dominik, Allain Adrien and Kis Andras. Thickness-dependent mobility in two-dimensional MoS2 transistors. Nanoscale, 2015,7: 6255-6260.
Radisavljevic Branimir, Radenovic Aleksandra, Brivio Jacopo, et al. Single-layer MoS2 transistors. Nature Nanotechnology, 2011, 6: 147-150.
Radisavljevic Branimir, Whitwick Michael Brian, and Kis Andras. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano, 2011, 5(12): 9934-9938.
Lee Hong-Sub, Sangwang Vinod K., Rojas William A. Gaviria, et al. Dual-gated MoS2 memtransistor crossbar array. Advanced Function Material, 2020, 30: 2003683.
Cheng Peifu, Sun Kai, and Hu Yun Hang, et al. Memristive behavior and ideal memristor of 1T phase MoS2 nanosheets. Nano Letters, 2016, 16(1): 572-576.
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