MEI, Zhaobo. Gan Vertical Power Finfets Using BN As Gate Dielectric. Highlights in Science, Engineering and Technology, [S. l.], v. 121, p. 98–105, 2024. DOI: 10.54097/606ntt11. Disponível em: https://drpress.org/ojs/index.php/HSET/article/view/27699. Acesso em: 14 jun. 2026.