Study on Preparation of CrSi Thin Film Resistance by Magnetron Sputtering

Mei Ji

doi:10.54097/s7r1v895

Authors

Mei Ji

DOI:

https://doi.org/10.54097/s7r1v895

Keywords:

Magnetron Sputtering; CrSi Thin Film; Annealing Process.

Abstract

Thin films prepared by magnetron sputtering can overcome the shortcomings of electron beam evaporation and have the advantages of film thickness control, adhesion, density, conductivity and refractive index, etc. This paper uses the method of literature research and review to clarify the specific process influencing factors in the preparation of CrSi films by magnetron sputtering and subsequent annealing. It provides a reference basis for the integrated application of CrSi thin film resistors.

Downloads

Download data is not yet available.

References

[1] J.J.ZHU, Z.L. Zhang, N.L.He: Electrical properties of CrSi thin film resistors for high precision analog circuits. 2022 10th International Symposium on Next-Generation Electronics (2023), 10221639.

[2] Jiang Wei, Tang Junfeng: CrSi thin film resistance technology by sputtering method, discussed at the 14th National Hybrid Integrated Circuit Academic-Huangshan, Anhui, China (2005):p.124-130.

[3] J.J. Zhu , Z. L, Zhang, L.H. Gu: Fabrication process and variation rule of electrical properties of CrSi thin film resistors, Journal of Physics: Conference Series, Vol.2680 (2024), p.1-6.

[4] Kong Lingying: Process factors affecting the quality of magnetron sputtering film, Semiconductor Technology, 1997 (5): p.21-23.

[5] Wang Fei, Chen Jun, Wang Xue-Yi: Preparation of CrSi thin film resistance with low temperature coefficient, Micro and Nano Electronic Technology, Vol. 54 (5), 2017: p. 355-359.

[6] Luo Shan, Zhang Zhengyuan: Optimization of resistance annealing conditions for CrSi thin films, Microelectronics, Vol38 (3), 2008: p. 316-319.