Analysis of Current Imbalance in Paralleled Silicon Carbide Power MOSFETs
DOI:
https://doi.org/10.54097/ajst.v3i3.2992Keywords:
Parallel SIC MOSFET, Parasitic inductance, Parasitic capacitance, Control variable method, Uneven current of current.Abstract
In order to adapt to the application scenarios of high power variable current, it is an effective solution to parallel multiple silicon carbide (SiC) power. However, the static parameters of SiC MOSFET devices are dispersed, the parasitic parameters of power loop are asymmetric, and the working junction temperature of the devices is different. All these factors will lead to non-uniform current stress between parallel devices.This article is based on the SiC MOSFET device provided in Wolfspeed,to explore the impact of circuit parameters mismatch on current sharing in parallel components. The influence of the circuit parameters on the static and dynamic current sharing of the parallel SiC MOSFET device is obtained, and the influence of each factor on the specific process is summarized, and the most influential factor on the current change in the case of parameter mismatch is compared.
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