Effects of Silicon Wafer’s Resistivity on Passivation and Devices Performances of Solar Cell
DOI:
https://doi.org/10.54097/ije.v2i3.8737Keywords:
TOPCon, Passivation, ResistivityAbstract
In the manufacture of solar cells, the resistivity of silicon wafers has a crucial impact on their performance. This study investigated the effects of different resistivities on p-TOPCon solar cells. The results indicate that lower resistivity wafers have a higher implied open-circuit voltage (iVoc) value, but higher carrier mobility due to the low resistivity leads to an increase in saturation current density (J0). Conversely, solar cells made on higher resistivity silicon wafers have a lower carrier mobility, leading to slower electron-hole recombination and lower bulk recombination, resulting in the advantage of lower saturation current density and higher minority carrier lifetime. At the same time, simulation shows that as the resistivity increases, the Voc and efficiency increase. However, cost considerations need to be taken into account as higher resistivity silicon wafers are more expensive. Therefore, resistivity between 2 - 3 Ω·cm2 is considered the preferred substrate for solar cells as it offers a better balance between cost and achieving high cell efficiency.
References
S.W. Glunz, B. Steinhauser, J.I. Polzin, C. Luderer, B. Grübel, T. Niewelt, A.M.O.M. Okasha, M. Bories, H. Nagel, K. Krieg, F. Feldmann, A. Richter, M. Bivour, M. Hermle, Silicon-based passivating contacts: The TOPCon route, Progress in Photovoltaics: Research and Applications. (2021).
J. Schmidt, R. Peibst, R. Brendel, Surface passivation of crystalline silicon solar cells: Present and future, Solar Energy Materials and Solar Cells. 187 (2018) 39–54.
F. Feldmann, M. Simon, M. Bivour, C. Reichel, M. Hermle, S.W. Glunz, Carrier-selective contacts for Si solar cells, Appl Phys Lett. 104 (2014).
Y. Huang, M. Liao, Z. Wang, X. Guo, C. Jiang, Q. Yang, Z. Yuan, D. Huang, J. Yang, X. Zhang, Q. Wang, H. Jin, M. Al-Jassim, C. Shou, Y. Zeng, B. Yan, J. Ye, Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact, Solar Energy Materials and Solar Cells. 208 (2020).
Y. Zeng, H. Tong, C. Quan, L. Cai, Z. Yang, K. Chen, Z. Yuan, C.H. Wu, B. Yan, P. Gao, J. Ye, Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells, Solar Energy. 155 (2017) 654–660.
T.F. Wietler, D. Tetzlaff, J. Krügener, M. Rienäcker, F. Haase, Y. Larionova, R. Brendel, R. Peibst, Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide, Appl Phys Lett. 110 (2017).
D. Yan, A. Cuevas, J.I. Michel, C. Zhang, Y. Wan, X. Zhang, J. Bullock, Polysilicon passivated junctions: The next technology for silicon solar cells?, Joule. 5 (2021) 811–828.
M. Singh, R. Santbergen, L. Mazzarella, A. Madrampazakis, G. Yang, R. Vismara, Z. Remes, A. Weeber, M. Zeman, O. Isabella, Optical characterization of poly-SiOx and poly-SiCx carrier-selective passivating contacts, Solar Energy Materials and Solar Cells. 210 (2020).
A. Richter, J. Benick, F. Feldmann, A. Fell, M. Hermle, S.W. Glunz, n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation, Solar Energy Materials and Solar Cells. 173 (2017) 96–105.