ZHU, Tianle. Study on switching behavior of silicon carbide MOSFET by gate driver. Highlights in Science, Engineering and Technology, [S. l.], v. 56, p. 506–519, 2023. DOI: 10.54097/hset.v56i.10720. Disponível em: https://drpress.org/ojs/index.php/HSET/article/view/10720. Acesso em: 17 apr. 2026.