Study on switching behavior of silicon carbide MOSFET by gate driver
DOI:
https://doi.org/10.54097/hset.v56i.10720Keywords:
IGBT, SiC MOSFET, gate driver, double pulse test, parasitic inductance.Abstract
Compared with IGBT, SiC MOSFET has improved frequency efficiency, outstanding reliability which not only can achieve energy saving and loss reduction, but also increase power density and other characteristics. SiC MOSFETs are faced with countless challenges in practice because of their superior switching speed. The gate driver was adjusted in this paper to investigate the switching behavior of silicon carbide MOSFET. The switching behavior of silicon carbide devices was first characterized by simulation software using a double- pulse test bench. Different parasitic inductances, resistances and additional parameters were found to have significant impacts on SiC MOSFET switching behavior. The results are analysed after combination and comparison.
Downloads
References
J.L.Hudgins, G.S.Simin, E.Santi, and M.A.Khan. “An assessment of wide bandgap semiconductors for power devices.” IEEE Transactions on Power Electronics, vol.18, no.3, pp.:907-914, May.2003
J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, and J. Rebollo, “A survey of wide bandgap power semiconductor devices,” IEEE Trans.Power Electron., vol. 29, no. 5, pp. 2155–2163, May 2014.
J. Rabkowski, D. Peftitsis, and H. Nee, “Silicon carbide power transistors: A new era in power electronics is initiated,” IEEE Ind. Electron. Mag., vol. 6, no. 2, pp. 17–26, Jun. 2012.
H. Alan Mantooth, K. Peng, E. Santi, and J. L. Hudgins, “Modeling of wide bandgap power semiconductor devices—Part I,” IEEE Trans. Electron Devices, vol. 62, no. 2, pp. 423–433, Feb. 2015.
S. Zhao, X. Zhao, A. Dearien, Y. Wu, Y. Zhao, and H. A. Mantooth,“An intelligent versatile model-based trajectory-optimized active gate driver for silicon carbide devices,” IEEE J. Emerg. Sel. Topics Power Electron., vol. 8, no. 1, pp. 429–441, Mar. 2020.
N. Oswald, P. Anthony, N. McNeill, and B. H. Stark, “An experimental investigation of the tradeoff between switching losses and EMI generation with hard-switched all-Si, Si-SiCSiC, and all-SiCSiC device combinations,” IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2393–2407, May 2014.
S.Zhao, A. Dearien, Y. Wu, C. Farnell, A. U. Rashid, F. Luo and H. A. Mantooth, “Adaptive Multi-Level Active Gate DriveGate driverrs for SiCSiC Power Devices,” IEEE Trans. Power Electron., vol. 35, no. 2, pp. 1882–1898, February 2020.
S. Yin et al., “Gate driveGate driverr optimization to mitigate shoot-through in high speed switching SiCSiC half bridge module,” in Proc. IEEE Int. Conf. Power Electron. Drive Syst., Sydney, Australia, Jun. 2015, pp. 484–491.
A. P. Camacho, V. Sala, H. Ghorbani, and L. Romeral, “A novel active gate drivegate driverr for improving SiCSiC MOSFET switching trajectory,” IEEE Trans. Ind. Electron., vol. 64, no. 11, pp. 9032–9042, Nov. 2017.
R.Fu, A.Grekov, J.Hudgins, A.Mantooth, and E.Santi. “Power SiCSiC DMOSFET model accounting for nonuniform current distribution in JFET region,” IEEE Transactions on Industry Applications, vol.28, no.1, Jan-Feb.2012.
R.Fu, A.Grekov, K.Peng, and E.Santi, “Parameter extraction procedure for a phySiCSiCs-based power SiCSiC Schottky diode model,” IEEE Transactions on Industry Applications, vol. 50, no.5, Feb.2014.
K. Peng, S. Eskandari, and E. Santi, “Analytical loss model for power converters with SiCSiC MOSFET and SiCSiC Schottky diode pair,” in Proc. IEEE Energy Conv. Congr. Expo., Montreal, QC, Canada, Sep. 2015, pp. 6153–6160.
J.Wang, H.S.Chung, and R.T.Li, “Characterization and experimental assessment of the effects of parasitic elements on the MOSFET switching performance,” IEEE Transactions on Power Electronics, vol.28, no.1, pp.573-590, Jan.2013.
Downloads
Published
Issue
Section
License
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
How to Cite
