Research Progress on Preparation of SnO2 Gas-Sensing Materials and Modification by Metal Ions Doping

Authors

  • Xinyang Gao

DOI:

https://doi.org/10.54097/je31me29

Keywords:

Modification by doping; synthesis method; n-type metal oxide semiconductor.

Abstract

This paper delineates the developmental trajectory of SnO2-based gas sensing sensors and conducts an in-depth analysis of the prevalent preparation methodologies employed for nano-powder and thin film SnO2 materials. Recent investigations underscore that the doping of metal ions primarily operates through atomic substitution and solid solution mechanisms, where partial distortions in the crystal structure and the creation of oxygen vacancies emerge as pivotal factors augmenting the gas sensing capabilities of doped SnO2. Future research endeavors aimed at refining the modification of SnO2 through doping are anticipated to pivot towards mitigating its susceptibility to cross-sensitivity when confronted with mixed gas environments, while concurrently exploring physicochemical and biologically inspired preparation methodologies to imbue the process with greater eco-friendliness.

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References

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Published

27-03-2024

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Section

Articles

How to Cite

Gao, X. (2024). Research Progress on Preparation of SnO2 Gas-Sensing Materials and Modification by Metal Ions Doping. Academic Journal of Science and Technology, 10(1), 350-353. https://doi.org/10.54097/je31me29