Study of SOI-MOS Self-heating Effect Suppression Method in CMOS Process

Abstract

Silicon on Insulator Metal Oxide Semiconductor (SOI-MOS) technology, as a new fabrication method, has good thermal characteristics compared with the traditional CMOS technology, which can effectively reduce the self-heating effect of the device. However, with the continuous development of nanotechnology, the feature size of CMOS integrated circuits is gradually reduced, and the thickness of silicon on the insulating layer is gradually thinned, which makes the "self-heating effect" increase. The passage of current through a conductor may result in a localized temperature increase due to the material impedance and internal resistance of the conductor caused by the current. This temperature increase may affect the performance and stability of the device. Therefore, it is important to take measures to protect or regulate this "self-heating effect" in the design. In this paper, through the analysis of the thermal characteristics of SOI-MOS devices, this article has studied the methods of suppressing the self-heating effect of SOI-MOS devices based on thermal interface materials, and the experimental results show that these methods can effectively improve the thermal conductivity of the devices, thus suppressing the self-heating effect of the devices.