WEI, Sifan. III-V Material Growth Based on Optimized MOCVD Process in High-Efficiency Photonic Integrated Circuits. Academic Journal of Science and Technology, [S. l.], v. 19, n. 3, p. 350–354, 2026. DOI: 10.54097/0c3byp69. Disponível em: https://drpress.org/ojs/index.php/ajst/article/view/33339. Acesso em: 24 jun. 2026.