III-V Material Growth Based on Optimized MOCVD Process in High-Efficiency Photonic Integrated Circuits

Sifan Wei

doi:10.54097/0c3byp69

Authors

Sifan Wei

DOI:

https://doi.org/10.54097/0c3byp69

Keywords:

MOCVD, PIC, III-V compound, V/III ratio.

Abstract

Metal-Organic Chemical Vapor Deposition (MOCVD) has become a crucial epitaxial growth method for the fabrication of high-quality integrated photonic circuits (PICs). The present research is aimed at the investigation of the MOCVD growth processes for GaAs, InP, and GaN, as well as substrate preparations and process optimizations in the case of MOCVD for III–V compound semiconductors. MOCVD provides precision control of temperature, pressure, and V/III ratio that allows the deposition of very uniform and accurately composed high-quality layers. These layers act as a base for the construction of quantum wells, heterostructures, and hybrid integration, which are the key parts of modern optoelectronic and photonic systems. The MOCVD's capacity to create complex multilayer structures also renders it a pivotal technique for the production of PICs that are large-scale and high-yield. In this paper, the basic process flow and key process parameters of MOCVD are studied. The influence of temperature, pressure, and V/III ratio on the film quality, surface morphology, and compositional uniformity in the epitaxial growth process is analyzed. More specifically, the authors aim to uncover the relationship between MOCVD growth dynamics and the resulting optical and structural properties of the materials used in PIC fabrication by performing a detailed investigation of the MOCVD process flow and the principal parameters.

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