LIU, Rui. Resistive Random-Access Memory (ReRAM) Circuit Design Optimization. Academic Journal of Science and Technology, [S. l.], v. 20, n. 2, p. 391–396, 2026. DOI: 10.54097/3w6yh137. Disponível em: https://drpress.org/ojs/index.php/ajst/article/view/34120. Acesso em: 2 may. 2026.