Recent Advances in the Synthesis and Structural Engineering of Two-Dimensional Transition Metal Dichalcogenides

Abstract

Due to their unique layered atomic configuration, adjustable band structure, and excellent exciton physical properties, two-dimensional transition metal chalcogenides (TMDs) have shown great application potential in the fields of next-generation nanoelectronic devices, optoelectronic devices, and flexible catalysis, and have become the focus of materials science and condensed matter physics research in recent years. This paper systematically sorts out the key progress of TMDs in high-quality synthesis and multi-dimensional structure regulation in recent years. In terms of synthesis strategies, the efficiency optimization of mechanical stripping, the kinetic mechanism of salt-assisted growth in chemical vapor deposition (CVD), the atomic-level precision control of molecular beam epitaxy (MBE), and the advantages of the liquid phase method in large-scale preparation are discussed. In terms of structural regulation, the influence of layer-dependent energy band evolution on carrier transport, metal-semiconductor phase transitions brought about by phase structure engineering, and novel quantum physical properties induced by Van der Waals heterojunction and Mohr superlattice construction are deeply analyzed. Finally, this paper summarizes the current problems of large-area single crystal preparation stability, interface integration challenges, and process compatibility, and aims to clarify the research direction of high-quality TMD materials from laboratory preparation to industrial application in the future, to provide a reference for subsequent research in this field.