Research Progress on Two-Dimensional Van der Waals Ferroelectric Materials
DOI:
https://doi.org/10.54097/yadgf648Keywords:
Two-dimensional van der Waals materials, Two-dimensional ferroelectric, Sliding ferroelectric, Ferroelectric field-effect transistor, Memory-computing integration.Abstract
This article reviews the application of two-dimensional ferroelectric materials in next-generation high-performance storage and neuromorphic computing, summarizing how electronic doping can enhance the coercive field of sliding ferroelectric materials, thereby improving the stability and anti-interference capability of data storage. However, this article also points out the performance trade-offs it brings, such as the decrease in polarization intensity and the deterioration of crystal quality. Research has found that by using mechanical probe imprinting technology combined with a flexible substrate, it is possible to achieve bidirectional, reversible, and non-destructive polarization switching in ultrathin ferroelectric films, solving the longstanding problem that traditional methods could only switch in one direction. On this basis, this paper discusses the engineering challenges that constrain its commercialization process, such as maintaining a high signal-to-noise ratio in the output while improving storage stability, and converting the inefficient point-by-point probe operations into large-area parallel production techniques compatible with mainstream semiconductor processes.
Downloads
References
[1] Vizner Stern M, Waschitz Y, Cao W, et al. Interfacial ferroelectricity by van der Waals sliding. Science, 2021, 372(6549): 1462-1466.
[2] Han M, Wang C, Niu K, et al. Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite. Nature Communications, 2022, 13: 5903.
[3] Liu H, Lai Q, Fu J, et al. Reversible flexoelectric domain engineering at the nanoscale in van der Waals ferroelectrics. Nature Communications, 2024, 15: 4556.
[4] Chen C, Zhou Y, Tong L, et al. Emerging 2D ferroelectric devices for in-sensor and in-memory computing. Advanced Materials, 2025, 37: 2400332.
[5] Chen X, Xuan X, Guo W, et al. Ferroelectricity in van der Waals multilayers via interfacial polarization engineering. npj 2D Materials and Applications, 2025, 9: 10.
[6] Xu B, Deng J, Ding X, et al. Octuple-state sliding ladder ferroelectrics in bilayer GeSe/SnS van der Waals heterostructures. Materials Horizons, 2025, 12: 9749.
[7] Guan Z, Zhao Y, Wang X, et al. Electric-field-induced room-temperature antiferroelectric–ferroelectric phase transition in van der Waals layered GeSe. ACS Nano, 2022, 16(1): 1308-1317.
[8] Shi C, Mao N, Zhang K, et al. Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics. Nature Communications, 2023, 14: 7168.
[9] Liu M, Wan Y, Wang P, et al. Electronic doping induced increase in coercive field of sliding ferroelectric 1T′-ReS₂ multilayers. Physical Review B, 2025, 111(10): 104110.
[10] Wu Q, Li Z, Han B, et al. Wafer-scale ultrathin and uniform van der Waals ferroelectric oxide. Science, 2026, 391(6784): eadz1655.
[11] Sun K, Bie J, Lv Y Y, et al. Electron transport in ferroelectric tunnel junctions based on two-dimensional Janus GeS bilayers. Progress in Physics, 2024, 44(4): 183-207.
[12] Zhou Y, Hou F, Fu X, et al. Thickness-driven modification of interface states and polarization switching in MoTe₂/BaTiO₃ heterostructures. Nano Letters, 2026, 26(7): 2493-2501.
[13] Zhou Y H, Xu W, Liu Y, et al. High tunneling magnetoresistance and tunneling electroresistance in multiferroic tunnel junctions constructed by two-dimensional Mn₂P₂Se₆/Sc₂CO₂ van der Waals heterostructures. Journal of Physics: Condensed Matter, 2025, 37(47): 475301.
[14] Li X, Qin B, Wang Y, et al. Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS₂. Nature Communications, 2024, 15: 10921.
Downloads
Published
Issue
Section
License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

