The Operating Mechanism and Resistance Variation Characteristics of Zno-Based Memristors

Chengxu Yang

doi:10.54097/5ze3rd19

Authors

Chengxu Yang

DOI:

https://doi.org/10.54097/5ze3rd19

Keywords:

Memristors; ZnO material; resistance variation; valence change memory mechanism.

Abstract

As the fourth basic circuit element predicted by theory, the memristor has become the cornerstone of a new computing paradigm technology. Among the numerous candidate materials for memristors, zinc oxide (ZnO) has attracted significant attention due to its excellent properties of low power consumption and high efficiency, as well as its mature preparation process featuring low cost and easy scalability. This paper will elaborate on the working principle, structure, and material characteristics of ZnO-based memristors; compare them with other mainstream memristors from four aspects: preparation cost, core performance, scenario applicability, and environmental stability; and analyze the advantages and disadvantages of ZnO-based memristors; further propose solutions to their defects and discuss their development potential.

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