Research Progress on Delay Analysis and Operation Optimization Based on NAND Gates

Abstract

This paper systematically investigates the delay characteristics and computational performance of NAND gates across different platforms, focusing on their performance in key metrics such as delay, power consumption, area, and integration density. The benefits and limitations of various NAND structures which consisting of speed, energy efficiency, and applicable scenarios are revealed by compare with different implementation paths, including traditional CMOS, FinFET, photonic crystals, Semiconductor Optical Amplifiers (SOA), and Organic Thin-Film Transistors (OTFT). By considering the shortcomings such as drive and integration limitations in silicon-based processes, high power consumption and functional rigidity in optical logic, and performance deficiencies in flexible electronics in NAND gate development—this paper proposes four optimization paths: a hybrid NAND architecture using heterogeneous integration and negative capacitance FinFETs, an optoelectronic neuromorphic scheme combining plasmonic and memristors, a dynamic body bias 3T NAND structure for low-voltage applications, and a quasi-CMOS logic utilizing oxide-organic TFT hybrids. This research can provide theoretical references and technical directions for the design and application of high-efficiency, high-integration, and flexible electronic systems NAND gates.