Discussion on the Principle, Process, Equipment and Application of Ion Implantation Technology

Abstract

Ion implantation is a way to regulate the material’s electronic, optical and mechanical properties through injecting impurity ions into the target substrate, aiming at making it acquire properties that are more in line with practical scenarios and finally producing electronic components with better performance. At present, the process of ion implantation first involves the generation of required ions, which happens in the ion source of the ion implanters. In it, the required ions are ionized by high-energy electron beams. Then, after the separation and purification through systems such as mass screening, the target material is finally implanted through a scanning system. The technology is already quite mature, but with the continuous development of semiconductor technology, the higher requirements in precision put forward higher demands on ion implantation doping. This article mainly studies the principle, process, equipment and application of ion implantation. The results indicate that the academic community has made considerable innovations in the types of doped atoms. Besides traditional elements such as nitrogen and phosphorus, oxygen, iodine and similar elements in the same group have already under research in terms of doping performance. The future development areas will focus on more types of element doping, more precise in doping processes, more stable in doping at the single atomic layer, and so on, to meet the continuously increasing size requirements in the semiconductor field and to achieve breakthroughs in quantum effects at the atomic scale.