Dynamic Synchronisation Process of Ion Implantation and Rapid Thermal Treatment

Abstract

With the rapid development of semiconductor manufacturing technology, the construction of device structures and gradual reduction in dimensions make the more heightened demands on doping depth control and activation efficiency. Therefore, in order to decrease lattice damage, enhance the activation efficiency, and reduce thermal budget at the same time during ion implantation and annealing processes, this paper lists four dynamic synchronisation process pathways, breaking the traditional method, which is called "implant first, anneal later". Each approach applies different methods and technical equipment, which enable tailored process routes in different scenarios. These methods include: plasma implantation, which has the advantageous conditions for large-area uniform implantation; With the specialty of regional and precision control, called synchronous laser scanning annealing; the significant use of laser and flash lamp assistance in ultra-shallow junctions; and the common process and industrial scalability provided by integrated high-temperature hot plates. These four approaches offer new perspectives for semiconductor manufacturing, while providing foundational concepts for future industrial-scale production and experimental precision fabrication. They improve semiconductor processes to lower power consumption, enable more complex structures, and provide finer controlt.