Analysis of the Two-dimensional Material Preparation Process Based on CVD TECHNOLOGY

Minwei Zhang

doi:10.54097/m74xj381

Authors

Minwei Zhang

DOI:

https://doi.org/10.54097/m74xj381

Keywords:

Chemical vapor deposition; Thin film material; Gas-phase conversion; Vapor deposition.

Abstract

The extensive discovery of two-dimensional materials has promoted the development of manufacturing technologies for two-dimensional thin films. Although CVD technology has been widely applied in the production of large-sized two-dimensional thin films, there is still room for improvement in the manufacturing of high-quality large-sized two-dimensional thin films. This paper discusses the process and basic principles of CVD technology in the manufacturing of two-dimensional materials, common optimization methods, and prospects for future optimization directions. Firstly, it introduces the gas-phase transformation of reactants, gas-phase reaction of reactants, transport of reactants, reactions on the substrate, and the final emission of reaction products in CVD technology. Then, it presents common optimization schemes for CVD technology, including low-pressure chemical vapor deposition, plasma-assisted chemical vapor deposition, and laser chemical vapor deposition. Through a comparative analysis of existing optimization techniques, it is concluded that effective optimization may be achieved in the gas-phase transformation of reactants and the deposition process in the future, providing a useful reference for the development and application of CVD technology.

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