Graphene-TMDs Van der Waals Heterojunction Photodetectors: From Mechanisms and Fabrication to Performance and Applications
DOI:
https://doi.org/10.54097/19b8s720Keywords:
Graphene; Transition metal dichalcogenides; Heterojunction; Photodetector; Van der Waals heterojunction.Abstract
Photodetectors, as the core devices for photoelectric signal conversion, are widely used in key fields such as optical communication, imaging, and sensing. The rise of two-dimensional materials provides a new idea for solving the material bottleneck of traditional photodetectors. Graphene, with its ultra-high carrier mobility and broad spectral response advantages, has become an ideal platform for constructing high-speed photodetectors. However, its zero-bandgap property leads to problems such as low photoresponsivity and high dark current. Transition metal dichalcogenides (TMDs) have a suitable direct bandgap and strong light-matter interaction, but their carrier mobility is relatively low. By constructing van der Waals heterojunctions of graphene and TMDs, the advantages of both can be fully utilized to achieve efficient separation and transport of photogenerated carriers, significantly improving the photodetection performance.
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