High Performance Photodetectors Based on WTe2/WS2 Heterojunction

Abstract

Two-dimensional (2D) materials have shown broad application prospects in the semiconductor field due to their unique physical and chemical properties, such as high carrier mobility, tunable bandgap, and atomic level thickness. By stacking 2D materials to construct optoelectronic devices such as field-effect transistors and photodetectors, the heterojunction effects can be fully explored, thereby promoting the improvement of their application performance in the fields of optoelectronics and microelectronics. In this work, using 2D semiconductor material WS₂ and semimetal WTe₂ to build a heterojunction, the specific detetectivity (D*) can reach up to 10¹¹ Jones at a wavelength of 405 nm, and a fast response time of about 25 ms is achieved, greatly improving the application of photodetectors in optical communication.