Research On Mg Doping in Nitride Semiconductor Materials

Abstract

Summarized the achievements of various model research directions in nitride Mg doped semiconductors in this thesis. Due to the Internal properties of Mg acceptors which resulting the low ionization rate of acceptor, and the low hole mobility in heavily Mg doped nitrides, the conductivity of Mg doped nitrides is limited. At present, research is divided into three categories of models, one is a new type of polarization model. This model adopts a built-in electron polarization ionization acceptor dopant in the bulk uniaxial semiconductor crystal, and provides an attractive solution for the problem of P-type and n-type doping in broadband gap semiconductors. The other two are the traditional thermal activation model. There are mainly ultra-high-pressure-annealing (UHPA) and multicycle rapid thermal annealing (MRTA) respectively. Both of these schemes can activate more Mg impurities, resulting in higher conductivity in nitrides. The principles, advantages and disadvantages, and future development prospects will be explained of these three models in this thesis.