Advancements And Applications of Finfet Technology in Modern Semiconductor Engineering
DOI:
https://doi.org/10.54097/65yg1431Keywords:
FinFET Technology, Semiconductor Miniaturization, SRAM Performance, Biomedical Electronics Applications.Abstract
This comprehensive study presents an in-depth analysis of Fin Field-Effect Transistor (FinFET) technology, a significant innovation in semiconductor technology, focusing on its structural attributes, applications, and future prospects. FinFETs, characterized by their distinctive fin-like channels, are pivotal in overcoming the limitations of traditional MOSFETs, particularly in the context of device miniaturization. The paper begins by exploring the basic theory and structural characteristics of FinFETs, emphasizing their enhanced control over short channel effects and reduced leakage currents in scaled-down devices. Attention is then directed towards the integration of FinFET technology in Static Random-Access Memory (SRAM), detailing how FinFETs contribute to improved stability and efficiency in memory storage. Another crucial application discussed is in the biomedical field, where FinFETs have facilitated the development of advanced instrumentation amplifiers and sensitive sensors, marking a leap in medical electronics. The paper concludes by addressing the challenges encountered by FinFETs as fabrication approaches the 5-7nm scale, including their physical and structural limitations. It also highlights ongoing research in structural modifications and material innovations like Gate-All-Around FETs and alternative materials, underscoring the continued evolution and relevance of FinFET technology in the ever-advancing semiconductor industry.
Downloads
References
Camenzind L C, Geyer S, Fuhrer A, et al. A hole spin qubit in a fin field-effect transistor above 4 kelvin. Nature Electronics, 2022, 5(3): 178-183.
Kumar B, Chaujar R. Fin field-effect-transistor engineered sensor for detection of MDA-MB-231 breast cancer cells: A switching-ratio-based sensitivity analysis. Physical Review E, 2023, 108(3): 034408.
Kim J H, Kim H W, Kim G, et al. Demonstration of fin-tunnel field-effect transistor with elevated drain. Micromachines, 2019, 10(1): 30.
Zhang S. Review of modern field effect transistor technologies for scaling. Journal of Physics: Conference Series. IOP Publishing, 2020, 1617(1): 012054.
Thomas H, Müller J, Terfort A. Field-Effect Transistors. Physical and Chemical Aspects of Organic Electronics: From Fundamentals to Functioning Devices, 2009.
Hisamoto D. Historical Perspective of the Development of the FinFET and Process Architecture. 75th Anniversary of the Transistor, 2023: 145-153.
Fischetti M V, Fu B, Vandenberghe W G. Theoretical study of the gate leakage current in sub-10-nm field-effect transistors. IEEE Transactions on Electron Devices, 2013, 60(11): 3862-3869.
Zhang M, Zhang L, Zhang Y. Anti-SEU design of SRAM based on FinFET process. 2020 International Wireless Communications and Mobile Computing (IWCMC). IEEE, 2020: 878-881.
Limachia M, Kothari N. Characterization of various FinFET based 6T SRAM cell configurations in light of radiation effect. Sādhanā, 2020, 45: 1-7.
Niaraki Asli R, Taghipour S. A near-threshold soft error resilient 7T SRAM cell with low read time for 20 nm FinFET technology. Journal of Electronic Testing, 2017, 33: 449-462.
Vemula P, Dhar R S. Design of 8T SRAM using 14nm FINFET Technology. Przeglad Elektrotechniczny, 2022, 98(10).
Sanjana S R, Banu R, Shubham P. Design and Performance Analysis of 6T SRAM cell in 22nm CMOS and FinFET technology Nodes. 2017 International Conference on Recent Advances in Electronics and Communication Technology (ICRAECT). IEEE, 2017: 38-42.
Kumar A A, Chalil A. Performance analysis of 6T SRAM cell on planar and FinFET technology. 2019 International Conference on Communication and Signal Processing (ICCSP). IEEE, 2019: 0375-0379.
Sonkusare R, Joshi O, Rathod S S. SOI FinFET based instrumentation amplifier for biomedical applications. Microelectronics Journal, 2019, 91: 1-10.
Garcia-Cordero E, Guerin H, Muhech A, et al. Heterogeneous integration of low power pH FinFET sensors with passive capillary microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode. 2016 46th European Solid-State Device Research Conference (ESSDERC). Ieee, 2016: 452-455.
Rani M S, Vinothkumar K, Krishnamoorthy R, et al. Design of low power VCO using FinFET technology for biomedical applications. Materials Today: Proceedings, 2021, 45: 2145-2151.
Maurya R K, Bhowmick B. Review of FinFET devices and perspective on circuit design challenges. Silicon, 2022, 14(11): 5783-5791.
Kumar A, Chhabra A, Chaujar R. GaAs junctionless FinFET using high-k dielectric for high-performance applications. 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2018: 126-129.
Kumar A, Tripathi S K, Gupta N, et al. GaN silicon-on-insulator (SOI) N-channel FinFET for high-performance low power applications. 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2019: 1-4.
Downloads
Published
Issue
Section
License
Copyright (c) 2024 Highlights in Science, Engineering and Technology
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
