Preparation Of Carbon Nanotube Transistors and Their Applications in Integrated Circuits
DOI:
https://doi.org/10.54097/b45htv75Keywords:
Carbon nanotubes, burn off, conductive channels, electrical properties.Abstract
Carbon nanotube is nanoscale tubular structure composed of carbon atoms. It has been widely used in electronics, medicine, and environmental science, due to its excellent mechanical properties. Among them, the application of carbon nanotubes in transistors is a promising research direction. Therefore, exploring the preparation of carbon nanotube transistors and their applications in integrated circuits has become a hot research direction in recent years. This article focuses on the structure, preparation process, and various issues of carbon nanotube field-effect transistors. Burning and removal of metallic carbon nanotubes were discussed, as these impurities are generated Inevitably during the production process. Then the article introduces three methods of fabricating conductive channels. The last part of the article, the electrical properties of carbon nanotube field-effect transistors were reviewed. The superior electrical properties of carbon nanotubes are highlighted. In addition, the change in electrical properties caused by two types of deformation, axial deformation and rotational deformation are also discussed.
Downloads
References
IBM Research Division. Carbon nanotube transistors and logic circuits. Physical: B, 2002,323: 6-14.
IBM Research Division. Manipulation of carbon nanotubes and properties of nanotube field-effect transistors and rings. Microelectronic Engineering, 1999,46: 101-104.
HUANG Haiyan, CHEN Changxin, ZHANG Yafei. Research on the preparation process of single-walled carbon nanotube field-effect transistors. Micro nano electronic technology, 2008,(02): 78-82.
Yang M H, Teo K B K. Advantages of top-gate, high k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 2006, 88: 113507.
SeidelR, Graham A P, Unger E, et al. High-current nanotube transistors. Nano Letters, 2004, 4: 831-834.
ZHAI Chunxue, WANG Ruozheng, MA Chao, YIN Tieen, WU Zhihua, ZHAO Lili, CHEN Jian, ZHANG Zhiyong, DENG Zhouhu. Preparation and characteristics of carbon nanotube-oriented network field-effect transistors. Journal of Northwest University (Natural Science Edition), 2011,41(06): 976-980.
Roschier L, Penttila J. Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation. Applied Physics Letters, 1999, 75 (5): 728-730.
BASKI A A. Fabrication of nanoscale structures using STM and AFM [M]. Academic Press, 2002.
Smith P A, Nordquist C D, Jackson T N. Electric-field assisted assembly and alignment of metallic nanowires. Appl Phys Lett, 2000, 77 (9): 1399-1401.
Kong J, Son H T. Synthesis of individual single walled carbon nanotubes on patterned silicon wafers. Nature, 1998, 395 (29): 878-881.
Angelucci R. Growth of carbon nanotubes by Fe-catalyzed chemical vapor processes on silicon-based substrates. Physical: E, 2007, 37: 11-15.
LIU Hong, YIN Haijian, XIA Shuning. Electrical properties of deformable carbon nanotube field-effect transistors. Acta Physical Sinica, 2009, 58(12): 8489-8500.
Downloads
Published
Issue
Section
License
Copyright (c) 2024 Highlights in Science, Engineering and Technology
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
