Two-Dimensional Ferroelectric Materials: Synthesis, Characterization and Applications
DOI:
https://doi.org/10.54097/rzvdx423Keywords:
Ferroelectricity; 2D materials; ferroelectric materials.Abstract
In recent years, the continuous advancements in microelectronics have driven the evolution of electronic devices towards miniaturization and integration. However, at the nanoscale level, surface and size effects become significant, imposing constraints on the use of conventional bulk ferroelectric materials in contemporary industry. As a result, in the field of materials research, two-dimensional (2D) ferroelectric materials with stable spontaneous polarization and minimal size effects have gained significant attention. These novel 2D ferroelectric materials have great potential for future nano-level ferroelectric applications, enabling high levels of device integration. To begin with, this paper divides 2D ferroelectric materials into two categories: intrinsic ferroelectrics and sliding ferroelectrics. It also discusses the features and current state of research on each of these categories. Next, typical 2D ferroelectric material preparation and characterization techniques are outlined. Additionally, 2D ferroelectric memory devices like ferroelectric diodes (FD), ferroelectric field effect transistors (FeFET), ferroelectric semiconductor field-effect transistors (FeSFET), and ferroelectric tunnel junctions (FTJ) are introduced. Finally, this review also presents expectations and potential challenges in the domain of 2D ferroelectric materials.
Downloads
References
Liu Fucai, You Lu, Seyler Kyle L., et al. Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes. Nature Communications, 2016, 7: 12357.
Io Weng Fu, Pang Sin-Yi, Wong Lok Wing, et al. Direct observation of intrinsic room-temperature ferroelectricity in 2D layered CuCrP2S6. Nature Communications, 2023, 14: 7304.
Naoki Higashitarumizu, Kawamoto Hayami, Lee Chien-Ju, et al. Purely in-plane ferroelectricity in monolayer SnS at room temperature. Nature Communications, 2020, 11: 2428.
Han Mengjiao, Wang Cong, Niu Kangdi, et al. Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite. Nature Communications, 2022, 13: 5903.
Ding Wenjun, Zhu Jianbao, Wang Zhe, et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials. Nature Communications, 2017, 8: 14956.
Cui Chaojie, Hu Wei-Jin, Yan Xingxu, et al. Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3. Nano Letters, 2018, 18: 1253-1258.
Wang Zhe, Gui Zhigang, Huang Li, et al. Sliding ferroelectricity in bilayer honeycomb structures: A first-principles study. Phys. Rev. B, 2023, 107: 035426.
Fei Zaiyao, Zhao Wenjin, Tauno A. Palomaki, et al. Ferroelectric switching of a two-dimensional metal. Nature, 2018, 560: 336-339.
Kenji Yasuda et al., Stacking-engineered ferroelectricity in bilayer boron nitride. Science, 2021, 372： 1458-1462.
Li Wenhui, Zhang Xuanlin, Yang Jia, et al. Emergence of ferroelectricity in a nonferroelectric monolayer. Nature Communications, 2023, 14: 2757.
Meng Peng, Wu Yaze, Bian Renji, et al. Sliding induced multiple polarization states in two-dimensional ferroelectrics. Nature Communications, 2022, 13: 7696.
Lin Zhaoyang, Liu Yuan, Udayabagya Halim, et al. Solution-processable 2D semiconductors for high-performance large-area electronics. Nature, 2018, 562: 254-258.
Chiu Ming-Hui, Ji Xiang, Zhang Tianyi, et al. Growth of large-sized 2D ultrathin SnSe crystals with in-plane ferroelectricity. Adv. Electron. Mater., 2023, 9: 2201031.
Xu Xiang, Zhong Tingting, Zuo Nian, et al. High-Tc two-dimensional ferroelectric CuCrS2 grown via chemical vapor deposition. ACS Nano 2022, 16, 5: 8141-8149.
Zhou Suyuan, Liao Luocheng, Chen Jiahao, et al. Periodic ferroelectric stripe domains in α-In2Se3 nanoflakes grown via reverse-flow chemical vapor deposition. ACS Appl. Mater. Interfaces, 2023, 15(19): 23613-23622.
Peng Qiaojun, Li Dongyan, Huang Pu, et al. Room-temperature ferroelectricity in 2D metal-tellurium-oxyhalide Cd7Te7Cl8O17 via selenium-induced selective-bonding growth. ACS Nano, 2021, 15(10): 16525-16532.
Gou Jian, Bai Hua, Zhang Xuanlin, et al. Two-dimensional ferroelectricity in a single-element bismuth monolayer. Nature, 2023, 617(7959): 67-72.
Lukas Rogée, Wang Lvjin, Zhang Yi, et al. Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides. Science, 2022, 376: 973-978.
Shi Chuqiao, Mao Nannan, Zhang Kena, et al. Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics. Nat Commun, 2023, 14: 7168.
Wang Ping, Zhao Yang, Na Rui, et al. Chemical vapor deposition synthesis of intrinsic high-temperature ferroelectric 2D CuCrSe2. Adv. Mater., 2024, 2400655.
Guan Zhao, Zhao Yifeng, Wang Xiaoting, et al. Electric-field-induced room-temperature antiferroelectric–ferroelectric phase transition in van der Waals layered GeSe. ACS Nano, 2022, 16(1): 1308-1317.
Wan Siyuan, Li Yue, Li Wei, et al. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional alpha-In2Se3 thin layers. Nanoscale, 2018, 10(31): 14885-14892.
Feng Guangdi, Zhu Qiuxiang, Liu Xuefeng, et al. A ferroelectric fin diode for robust non-volatile memory. Nature Communications, 2024, 15: 513.
Fang Shibo, Li Qiuhui, YangChen, et al. Polarization tunable bidirectional photoresponse in Van der Waals α−In2Se3/NbX2 (X=S, Se, and Te) ferroelectric diodes. Phys. Rev. Materials, 2023, 7: 084412.
Si Mengwei, Liao Pai-Ying, Qiu Gang, et al. Ferroelectric field-effect transistors based on MoS2 and CuInP2S6 two-dimensional van der Waals heterostructure. ACS Nano, 2018, 12(7): 6700-6705.
Si Mengwei, Atanu K. Saha, Gao Shengjie, et al. A ferroelectric semiconductor field-effect transistor. Nat Electron, 2019, 2: 580-586.
Wang Lin, Wang Xiaojie, Zhang Yishu et al. Exploring ferroelectric switching in α-In2Se3 for neuromorphic computing. Adv. Funct. Mater., 2020, 30: 2004609.
Wu Jiangbin, Chen Hung-Yu, Yang Ning, et al. High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation. Nat Electron, 2020, 3: 466-472.
Kang Lili, Jiang Peng, Hao Hua, et al. Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials. Phys. Rev. B, 2021, 103: 125414.
Liu Zifang, Hou Pengfei, Sun Lizhong, et al. In-plane ferroelectric tunnel junctions based on 2D α-In2Se3/semiconductor heterostructures. npj Comput Mater, 2023, 9: 6.
Downloads
Published
Issue
Section
License
Copyright (c) 2024 Highlights in Science, Engineering and Technology
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
