Review Of the Light Extraction Efficiency of Gan Leds
DOI:
https://doi.org/10.54097/wp46m686Keywords:
Review, Light Extraction Efficiency, GaN LEDs.Abstract
Various new methods have emerged to enhance the light extraction efficiency (LEE) of Gallium Nitride (GaN)-based Light Emitting Diodes (LEDs),. This review examines several key techniques, including surface texturization, patterning of the GaN and substrate interface, chip geometry design, integration with photonic crystals, and epitaxial micro/nano structures. Surface texturization improves LEE by reducing light reflection and increasing scattering, although it may introduce surface defects. Interface patterning optimizes light propagation but increases manufacturing costs. Chip geometry design allows for specific light extraction paths but may pose manufacturing challenges due to complex designs. Photonic crystal technology enhances LEE though controlling light refraction but requires precise fabrication techniques. Among these approaches, epitaxial micro/nanostructures stand out for providing optimal control of the light extraction path while minimizing material waste and structural damage, despite the more demanding epitaxial conditions. Therefore, epitaxial micro/nano structures are considered the optimal strategy for significantly improving LEE in GaN-based LEDs, paving the way for more efficient and sustainable lighting technologies.
Downloads
References
C. Huh et al., "Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface," Journal of Applied Physics 93 (11), 9383-9385 (2003). https://doi.org/10.1063/1.1571962.
T. Fujii et al., "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Applied physics letters 84 (6), 855-857 (2004).
S.-I. Na et al., "Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes," IEEE photonics technology letters 18 (14), 1512-1514 (2006).
Y. M. Song et al., "Multifunctional light escaping architecture inspired by compound eye surface structures: From understanding to experimental demonstration," Opt. Express 19 (102), A157-A165 (2011).
X.-J. Zhuo et al., "Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface," Journal of Materials Science: Materials in Electronics 25 (10), 4200-4205 (2014). https://doi.org/10.1007/s10854-014-2149-y.
F.-D. Lai, "Effect of Surface Texture on Light Extraction Efficiency for LEDs," Crystals 13 (3), (2023). https://doi.org/10.3390/cryst13030491.
Y.-J. Lee et al., "High Light-Extraction GaN-Based Vertical LEDs With Double Diffuse Surfaces," IEEE Journal of Quantum Electronics 42 (12), 1196-1201 (2006). https://doi.org/10.1109/jqe.2006.883468.
Z. Shaban et al., "Transfer Printing of Roughened GaN‐Based Light‐Emitting Diodes into Reflective Trenches for Visible Light Communication," Advanced Photonics Research 3 (8), (2022). https://doi.org/10.1002/adpr.202100312.
S. S. Schad et al., "Extraction Efficiency of GaN-Based LEDs," physica status solidi (a) 188 (1), 127-130 (2001). https://doi.org/10.1002/1521-396x(200111)188:1<127: Aid-pssa127>3.0.Co;2-t.
X. H. Wang, P. T. Lai and H. W. Choi, "The contribution of sidewall light extraction to efficiencies of polygonal light-emitting diodes shaped with laser micromachining," Journal of Applied Physics 108 (2), (2010). https://doi.org/10.1063/1.3456445.
E. Yablonovitch, "Inhibited spontaneous emission in solid-state physics and electronics," Physical review letters 58 (20), 2059 (1987).
D.-H. Kim et al., "Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns," Applied Physics Letters 87 (20), (2005).
S.-J. Chang et al., "Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography," Applied Physics Letters 91 (1), (2007).
P. H. Lei, P. C. Yang and P. C. Huang, "Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes," Materials (Basel) 14 (9), (2021). https://doi.org/10.3390/ma14092200.
C. Chiu et al., "Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes," Opt. Express 17 (23), 21250-21256 (2009).
S. J. Kim, K. H. Kim and T. G. Kim, "Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks," Opt. Express 21 (7), 8062-8068 (2013). https://doi.org/10.1364/OE.21.008062.
J.-T. Lian et al., "Improved light extraction efficiency on GaN LEDs by an in 2 O 3 nano-cone film," J. Mater. Chem. C 1 (40), 6559-6564 (2013).
D. Kim et al., "Arrays of TiO2 Nanosphere Monolayers on GaN-Based LEDs for the Improvement of Light Extraction," Applied Sciences 13 (5), (2023). https://doi.org/10.3390/app13053042.
Downloads
Published
Issue
Section
License
Copyright (c) 2024 Highlights in Science, Engineering and Technology
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
