Analysis Of Output Characteristics of Three Different Ga2O3 Heterojunction UV Photodetectors

Abstract

Phototransistors can be used as switches and amplifiers in digital and ultraviolet photodetectors, respectively. Gallium oxide ( Ga2O3) is a common material used to make devices like transistors. However, these photodetectors usually face some problems of drain current saturation and bias saturation. But regulating the transistor switching ratio usually requires adding a voltage to the gate terminal, and will cause high current flow throughout the transistor if the gate power supply pressurized beyond the threshold. The structure of a LET is similar to that of a conventional field effect transistor (FET), and they also have similar current and voltage output characteristics, but the difference is that the LET is also subject to light regulation. This paper mainly concentrates on the analysis of LFT devices made of heterojunction of three different materials n- /p-GaN, Nanoporous /GaN and Graphene/β- , and analyzes and compares a series of key parameters such as switch ratio and responsiveness, etc. Through these comparisons, this paper can more clearly understand what LFT devices made of different materials can better adapt to the needs of different experiments. Under different voltage ranges and light intensity, LFT devices made of different materials can better adapt to the needs of experiments.