Development of The Third Generation of Semiconductors with SiC and GaN as The Mainstay
DOI:
https://doi.org/10.54097/hset.v27i.3798Keywords:
SiC, GaN, Third Generation Semiconductor.Abstract
The application and development of semiconductor technology has a very important role in the development of the world's science and technology. The third-generation semiconductors are broadband semiconductors with high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, which are incomparable to the previous two generations of semiconductors. In this paper, we focus on the third-generation semiconductor materials and further study the most mature and widely used SiC and GaN, and introduce the mainstream methods for the preparation of SiC and GaN. The paper also introduces the applications of these two materials in energy, communication, and consumer electronics, taking into account the current development of the industry. Finally, the paper also considers the problems and challenges that still need to be solved in the next stage of the industry's development.
Downloads
References
Acheson E G. Production of artificial crystalline carbonaceous materials, carborundum[J]. English Pat, 1892 (17911).
Lely J A. Preparation of single crystals of SiC and the effect of the kind and amount of impurities on the lattice[J]. Ber. Dtsch. Ker. Ges, 1955, 32: 229-234. Tairov Yu.M.,Tsvetkov V.F.. Investigation of growth processes of ingots of silicon carbide single crystals[J]. Journal of Crystal Growth,1978,43(2).
Ma Kunlong. Short term distributed load forecasting method based on big data [D]. Changsha: Hunan University, 2014.
Liu Q K K, Hoffmann A, Siegle H, et al. Stress analysis of selective epitaxial growth of GaN[J]. Applied physics letters, 1999, 74(21): 3122-3124.
Wang B, Callahan M J. Ammonothermal synthesis of III-nitride crystals[J]. Crystal growth & design, 2006, 6(6): 1227-1246.
Mori Y, Imanishi M, Murakami K, et al. Recent progress of Na-flux method for GaN crystal growth[J]. Japanese Journal of Applied Physics, 2019, 58(SC): SC0803.
Jouha Wadia, Richardeau Frédéric, Azzopardi Stephane. Towards a safe failure mode under short-circuit operation of power SiC MOSFET using optimal gate source voltage depolarization[J]. Microelectronics Reliability,2021,126.
Ghazanfari A, Perreault C, Zaghib K. EV/HEV industry trends of wide-bandgap power semiconductor devices for power electronics converters[C]//2019 IEEE 28th International Symposium on Industrial Electronics (ISIE). IEEE, 2019: 1917-1923.
Guoyou Liu, Yibo Wu, Kongjing Li, Yangang Wang, ChengZhan Li. Development of High Power SiC Devices for Rail Traction Power Systems[J]. Journal of Crystal Growth,2018,507.
Halkos G E, Gkampoura E C. Reviewing usage, potentials, and limitations of renewable energy sources[J]. Energies, 2020, 13(11): 2906.
Downloads
Published
Issue
Section
License
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
