Applications and Research Progress of GaN
DOI:
https://doi.org/10.54097/hset.v32i.5177Keywords:
semiconductor material, growth technology, defect behavior.Abstract
As a typical wide bandgap semiconductor material, GaN has the advantages of high temperature resistance, high breakdown resistance voltage and high electron migration rate, and GaN growth technology is very critical to give full play to the above advantages of GaN and ensure material reliability. This paper first introduces the development process of semiconductor materials, and introduces the advantage intervals of GaN compared with other semiconductor materials, and then introduces several different growth methods commonly used by GaN, and discusses the possible shortcomings of the current research. Based on the review analysis, this paper proposes the problems that need to be solved urgently in the future GaN growth method and the research prospects.
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