Research on the advantages and development status of new material MOSFET
DOI:
https://doi.org/10.54097/hset.v33i.5313Keywords:
MOSFET, SiC, GaN, graphene.Abstract
When using MOSFETs, in order to improve the operating speed, so that higher power density and lower functional consumption can be obtained in the process, researchers have explored in multiple dimensions. In this paper, three popular new material MOSFETs are mainly explained, including SiC MOSFET, GaN MOSFET and graphene MOSFET. This paper introduces their advantages and their development status, so as to compare the advantages of new materials. In conclusion, By adding materials, the electron mobility and stability of the FET can be increased in some situation. The research in this paper will undoubtedly promote the further development of MOSFET.
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