Design and Comparative Structure Simulation Analysis of Bandgap Reference Source Based on CMOS 0.18μm Process

Boning Feng; Huangshi Su; Yuzhong Xiang

doi:10.54097/12863h62

Authors

Boning Feng Arizona College of Technology, Hebei University of Technology, Tianjin, 300000, China
Huangshi Su School of Mechanical and Electrical Engineering, Guangdong University of Technology, Guangzhou, Guangdong, 510006, China
Yuzhong Xiang School of CHIPS, Xi’an Jiaotong-Liverpool University, Jiangsu Taicang, 215400, China

DOI:

https://doi.org/10.54097/12863h62

Keywords:

Bandgap reference source, Temperature drift, CMOS process, Voltage reference, Cadence simulation.

Abstract

To address the need for high-precision reference voltages in analog integrated circuits, this paper designs and simulates two bandgap reference structures based on TSMC's 0.18µm CMOS process. First, the operating principle and temperature compensation mechanism of a traditional current mirror-based bandgap reference are implemented and analyzed. Building on this foundation, a bandgap reference containing an operational amplifier is then introduced, and simulations of the two structures are compared. Simulation comparison results on the Cadence Spectre platform show that the op amp-based bandgap reference significantly outperforms the classic current mirror structure in key metrics such as temperature coefficient and power supply rejection ratio (PSRR). The temperature coefficient is reduced from approximately 27.4ppm/ to 10.6ppm/ , the maximum voltage drift is reduced from 5.29mV to 2.24mV, and the low-frequency PSRR is improved from 18.3 dB to 46.5dB. These results demonstrate that the op amp-based structure offers significant advantages in temperature stability and immunity to power supply interference, making it more suitable for use in high-precision analog and mixed-signal circuits.

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