Research on Radiation Effects of CMOS Image Sensors

Abstract

With technological advancements, chips have become a critical component of human life. CMOS image sensors (CIS), with advantages such as low power consumption, low cost, high integration, and high speed, are gradually replacing CCDs and becoming important devices in the aerospace field. However, the presence of space radiation limits their large-scale application in satellites. This paper focuses on the effects of heavy ion radiation, proton radiation, and transient dose rate effects on CMOS image sensors. Through circuit design and simulation models, key parameters and changing trends of the sensors before and after radiation are tested and analyzed, combined with physical theories to explore the mechanisms. The research results indicate that these three types of radiation can lead to pixel degradation and even sensor failure, but their mechanisms and degrees of impact differ. Nevertheless, these radiation effects are not entirely unavoidable and can be effectively mitigated through specific design methods or process optimization. In summary, this study provides important references and insights for research on radiation effects in CMOS image sensors.