Power Optimization in 3D NAND Flash: A Co-Design Study of Architecture, Circuits, and Algorithms

Authors

  • Ziqi Xie

DOI:

https://doi.org/10.54097/wsxxnc64

Keywords:

3D NAND flash, power consumption, collaborative analysis, near-memory computing.

Abstract

As data for storage and calculation continues to explode, 3D NAND flash is a key technology for storing information because of its high density. However, adding more layers of stacks and computer functions has led to the problem of power consumption, restricting further advancement. To solve this kind of challenge, in this paper, we creatively utilized a three-layer collaborative analysis framework at the architecture, circuit, and algorithm levels. The architecture level is like near-memory computing, but it gives me a little taste of what the hardware is doing. Then, have full link EE management and exact circuit control for the circuit to cut hardware cost. In terms of algorithms. Dynamic power—optimize based on intelligent prediction and global scheduling, research and study the internal relationship and principles of promoting and supporting the optimization method at different levels of research, create more collaborative rules in fewer lines, can really decrease hardware leakage, and can also respond to changes in regulations in real time. It supplies basic theoretical aid with specific systemic directions on low energy use, extremely thick 3D NAND memory storage systems, and the associated computation combined systems.

Downloads

Download data is not yet available.

References

[1] S. S. Park, J. D. Lyu, M. Kim, et al., "A 28Gb/mm² 4XX-Layer 1Tb 3b/cell WF-Bonding 3D-NAND Flash with 5.6Gb/s/pin IOs," in Proc. 2025 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA, IEEE, 2025, pp. 504-505.

[2] M. Kim, S. W. Yun, J. Park, et al., "A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface," in Proc. 2022 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA, IEEE, 2022, pp. 136-137.

[3] S. Kim, B. Ahn, B. Jun, et al., "Low Power Decoder Architecture of Product Code for Storage Controller," in Proc. 2022 19th International SoC Design Conference (ISOCC), Gangneung-si, Korea, IEEE, 2022, pp. 324-325.

[4] H. T. Lue, C. H. Hung, K. C. Wang, et al., "Prospects of Computing In or Near Flash Memories," in Proc. 2024 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, IEEE, 2024, Art. no. 10873502.

[5] A. B. Chen, D. I. Moon, Z. Wan, et al., "On the Challenges of Open-Block Reads in 3D NAND," in Proc. 2025 IEEE International Memory Workshop (IMW), Monterey, CA, USA, IEEE, 2025, Art. no. 11026944.

[6] P. K. Hsu, P. Y. Du, C. Lo, et al., "An Approach of 3D NAND Flash Based Nonvolatile Computing-In-Memory (nvCIM) Accelerator for Deep Neural Networks (DNNs) with Calibration and Read Disturb Analysis," in Proc. 2020 IEEE International Memory Workshop (IMW), Dresden, Germany, IEEE, 2020, Art. no. 9108116.

[7] Y. Song, Y. Lv, L. Shi, "DECC: Differential ECC for Read Performance Optimization on High-Density NAND Flash Memory," in Proc. 2023 28th Asia and South Pacific Design Automation Conference (ASP-DAC), Tokyo, Japan, IEEE, 2023, pp. 104-109.

[8] J. Park, R. Azizi, G. F. Oliveira, et al., "Flash-Cosmos: In-Flash Bulk Bitwise Operations Using Inherent Computation Capability of NAND Flash Memory," in Proc. 2022 55th IEEE/ACM International Symposium on Microarchitecture (MICRO), Chicago, IL, USA, IEEE, 2022, pp. 937-955.

[9] A. Spessot, S. M. Salahuddin, R. Escobar, et al., "Thermally Stable Packaged Aware LV HKMG Platforms Benchmark to Enable Low Power I/O for Next 3D NAND Generations," in Proc. 2022 IEEE International Memory Workshop (IMW), Dresden, Germany, IEEE, 2022, Art. no. 9779308.

[10] J. H. Lee, J. E. Park, D. H. Shin, et al., "A Reference Voltage Loop Operation Based ZQ Calibration Technique for Multi-Load High-Capacity NAND Flash Memory Interface," IEEE Access, vol. 13, pp. 95563-95573, 2025.

Downloads

Published

30-03-2026

Issue

Section

Articles

How to Cite

Xie, Z. (2026). Power Optimization in 3D NAND Flash: A Co-Design Study of Architecture, Circuits, and Algorithms. Academic Journal of Science and Technology, 20(2), 30-36. https://doi.org/10.54097/wsxxnc64