Research into Optimizing the Performance of NAND Logic Gates in Terms of Delay and Power Consumption

Abstract

NAND logic gates constructed with CMOS/MOSFET technology in digital integrated circuits are susceptible to degradation. Optimizing latency and power is vital to enhance performance. In order to optimize latency and power consumption in NAND logic gates, this paper conducts a systematic analysis of recent research on these parameter optimizations. There are three main ways to reduce latency. The first is to use all-optical structures with MIM waveguides. The second is to increase the frequency of RF MEMS resonators. The third is to control devices at the RFET level. The following three core strategies for power optimization are examined in this study. The initial technologies under consideration are those which combine floating-gate metal-oxide-semiconductor field-effect transistor (FGMOS) and carbon nanotube field-effect transistor (CNTFET). The second is all-optical architectures integrated with passive diffractive networks. CMOS complementary structures represent the third strategy. The study identifies the limitations of these approaches. These include constraints in traditional and emerging process technologies, and limitations in delay-power optimization. In order to address these shortcomings, a number of targeted strategies have been proposed, including the improvement of environmental adaptability, the optimization of circuit structures and the innovation of design techniques. The present research provides systematic guidance and theoretical support for advancing technologies related to the delay and power optimization of NAND logic gates.