Unlocking The Potential of Gallium Nitride (Gan) For Third-Generation Semiconductors: Advantages, Applications, And Future Prospects

Sihan Chen

doi:10.54097/xtxnzg85

Authors

Sihan Chen

DOI:

https://doi.org/10.54097/xtxnzg85

Keywords:

CMOS, HEMT, GaN, semiconductor.

Abstract

Wide-bandgap materials, exemplified by gallium nitride (GaN), are poised to elevate electronic performance to new heights. This paper is focus on the third-generation semiconductor which is considered as the most promising semiconductor. The first section will discuss the fundamentals of CMOS and HEMT, including their construction, operation, benefits, and properties. The two are next be compared, and it is revealed that although GaN has some limitations on its cost and manufacture, it also having higher energy gap, compact size, higher efficiency, lower switching losses. Meeting the increasingly rigorous requirements associated with high power and high-density applications requires the use of these advantages. Then, using examples from the aerospace, mobile phone chargers, and LiDAR fields, applications of GaN HEMTs are discussed. The issues and prospects for third generation semiconductors are finally went over. It shows significant potential for energy efficiency benefits in infrastructure, and it is intriguing to see how the new semiconductor generation develops in the next few years.

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References

Romli N, Minhad K, Reaz M, et al. An overview of power dissipation and control techniques in cmos technology. J. Eng. Sci. Technol, 2015, 10(3): 364-382.

Mimura T. The early history of the high electron mobility transistor (HEMT). IEEE Transactions on microwave theory and techniques, 2002, 50(3): 780-782.

Ye P D, Yang B, Ng K K, et al. GaN MOS-HEMT using atomic layer deposition Al/sub-2/O/sub-3/as gate dielectric and surface passivation. Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. IEEE, 2004: 167-172.

Butnicu D, Lazăr L C. An Efficiency Comparative Workbench Study of eGaN and Silicon Discrete Transistor based Buck Converters. 2020 IEEE 26th International Symposium for Design and Technology in Electronic Packaging (SIITME). IEEE, 2020: 350-353.

Asif Khan M, Bhattarai A, Kuznia J N, et al. High electron mobility transistor based on a GaN‐Al x Ga1− x N heterojunction. Applied Physics Letters, 1993, 63(9): 1214-1215.

Lidow A, De Rooij M, Strydom J, et al. GaN transistors for efficient power conversion. John Wiley & Sons, 2019.

Mishra U K. Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply. Proceedings of the IEEE, 2023, 111(4): 322-328.

Glaser J. How GaN power transistors drive high-performance lidar: Generating ultrafast pulsed power with GaN FETs. IEEE Power Electronics Magazine, 2017, 4(1): 25-35.

Satoh T, Osawa K, Nitta A. GaN HEMT for space applications. 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). IEEE, 2018: 136-139.

Bockowski M, Iwinska M, Amilusik M, et al. Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds. Semiconductor Science and Technology, 2016, 31(9): 093002.

Glaser J. How GaN power transistors drive high-performance lidar: Generating ultrafast pulsed power with GaN FETs. IEEE Power Electronics Magazine, 2017, 4(1): 25-35.