Study on stress isolation structure of piezoresistive high-g accelerometer
DOI:
https://doi.org/10.54097/hset.v9i.1872Keywords:
thermal stress isolation; zero offset; piezoresistive; high-g accelerometer.Abstract
We put forward a novel thermal stress isolation structure with five anchors, which greatly suppresses the zero offset of piezoresistive high-g accelerometer. In this paper, the parameters of the thermal stress isolation structure are optimized by finite element simulation to ensure that the sensor has lower zero offset and a good natural frequency. A high natural frequency can prevent the sensor from being damaged due to resonance when it is subjected to shock. Finally, the zero offset of the sensor with thermal stress isolation is reduced to 10% of that without thermal stress isolation. Natural frequency of the sensor is 264.18 kHz. Its sensitivity is 1.1μV/G/5V according to shock simulation of 100,000 g.
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