Recent Progress of β-Ga2O3 and Transition Metal doped β- Ga2O3 Structure and Properties
DOI:
https://doi.org/10.54097/er1nze77Keywords:
β-Ga2O3, transition metal doped β-Ga2O3, semiconducting material.Abstract
Oxide semiconductor material formed from oxygen and a metal is a compound semiconductor material. Important oxide semiconductor materials include Cu2O, ZnO, SnO2, Fe2O3, TiO2, ZrO2, CoO, WO3, Ga2O3 and others. Oxide semiconductors have been receiving strong attention and are widely used in different fields such as solar cells and photovoltaic technology. Due to the development of technology, the high-performance techniques demand more from the parts. Semiconductor is an intensively researched substance that can be used in a wide range of technologies. β-Ga2O3 is a metal oxide that has good properties which can fit in different applications. However, due to its wide band gap, it is essentially an insulator. In this case, researchers put a lot of effect into the doping of β- Ga2O3 to improve its electronic conductivity. This review summarized the structures and properties of β- Ga2O3 single crystal and the amelioration of the characteristics by transition metal (Mn, Zn, V, Fe, Nb, Ta and W) dopants.
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