Transmission Coefficients of The Asymmetric Single and Double Barriers
DOI:
https://doi.org/10.54097/cxt63m23Keywords:
Transmission coefficient; Double barrier; Tunnelling effect; Resonant tunneling diode.Abstract
The quantum tunneling effect, which is based on the quantum theory that microscopic particles behave in waves through barriers higher than their own energy, has important applications in practical technology. Microscopes such as scanning tunneling microscopes, which use quantum tunneling to generate tunnel currents, have a resolution of up to the desired level. Moreover, it can be used in biology to observe molecular structures such as macromolecules and biofilms. In this paper, the transmission coefficients of one-dimensional asymmetric unilateral barrier and asymmetric two-sided barrier under general arbitrary boundary conditions are strictly derived using the conventional method of solving the steady state Schrodinger equation by quantum mechanics and matrix. Meanwhile, the transmission coefficients of symmetric two-sided barrier are numerically studied. From the above series of methods, it is deduced that the basic working principle of resonant tunneling diode and other semiconductor electronic devices is exactly the tunnel effect. Thus, it is found that quantum tunneling effect plays an important role in life.
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Wang D., Su J., Tan W., et al. Research progress and application of THZ resonant tunneling diode detector. Terahert Journal of Science and Electronic Information, 2022, 20(10):1-3.
Li Haifeng, Wang Xinmao, et al. Study and numerical simulation of quantum tunneling for one-dimensional double square potential barriers. College Phsyics, 2022, 41(1):4-5.
Yang Jun, Chen Lei, Chen Zhi-li, Xiao Xue-wang. Study and numerical simulation for quantum tunneling characteristics in asymmetric potential barrier. College Phsyics, 2011, 30(10): 7-10+29.
Li Ming, Wang Hongzhang, Study on the quantum effect of the cold fusion in metal electrodes. Chinese Journal of Nuclear Science and Engineering, 2005, 25(4): 12-16.
Liu Shuyi, Wolf Martin, Kumagai Takashi. Plasmon-Assisted Resonant Electron Tunneling in a Scanning Tunneling Microscope Junction. Physical Review Letters, 2018, 121(22): 226802.
Hughes J F, van Dam A, Foley J D, et al. Computer Graphics: Principles and Practice. Upper Saddle River, NJ: Pearson Education, 2013: 1047-1048.
Yahyaoui N., Sfina N., Said M., et al. Electron transport through cubic InGaN/AlGaN resonant tunneling diodes. Computer physics communication, 2014, 185(12): 3119-3126.
Ali Rezaei, Patryk Maciazek, Vihar P. Georgiev, et al. Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source. Solid -State electronics, 2022, 194:108339.
Bommalingaiah B., Narayan Gaonkar, R. G. Vaidya. Effect of spontaneous polarization field on diffusion thermopower in AlGaN/GaN heterostructures. Chemical Physics Impact, 2023, 7: 100251.
Rong Tao-tao. Study of polarization effect in gallium nitride-based resonant tunnelling diodes. Journal of Baoji University of Arts and Sciences (Natural Science), 2022, 42(2):65-70.
Sushree Ipsita, P. K. Mahapatra, P. Panchadhyayee. Optimum device parameters to attain the highest peak to valley current ratio (PVCR) in resonant tunneling diodes (RTD). Physica B: Condensed Matter, 2021, 661:412788.
Huang Liang, Pan Ping, Zhou Chao. The speech signal modeling was ultimately conducted using the Gaussian Mixture Model (GMM) to finalize the speaker authentication process. Journal of Computer Applications, 2017, 37(9): 2617-2620.
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