Study of the effect of experimental conditions on atomic layer deposition of aluminum nitride films
DOI:
https://doi.org/10.54097/hset.v55i.9928Keywords:
Aluminum nitride film, Pulsed Chemical Vapor Deposition, High temperature annealing.Abstract
AlN is an extremely chemically stable material that can withstand high temperature impacts and can be used as a coating against high temperature oxidation. In this paper, AlN films were grown on Si (111) substrates using pulsed chemical vapor deposition with a metal-organic source and ammonia as precursors followed by high-temperature in situ annealing and material physical characterization. The effects of temperature and plasma source on the AlN films were investigated, and it was concluded that the higher the temperature, the higher the growth rate of the AlN films and the lower the oxidation level. The plasma source pulsed mode showed higher growth rate and stronger aluminum signal, but its oxidation level was also higher. The plasma source normally open mode has a more desirable nitrogen signal.
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